| 2005-02-01 | Enhancement of tunneling magneto resistance by inserting an amorphous nonmagnetic FeZr layer in magnetic tunnel junctions | Jun, KI; Lee, JH; Shin, KH; Rhie, K; Lee, BC |
| 2000-10 | Low-field tunnel-type magnetoresistance properties of polycrystalline and epitaxial La0.67Sr0.33MnO3 thin films | Shim, IB; Oh, YJ; Choi, SY |
| - | Low-field tunneling magnetoresistance properties of polycrystalline and epitaxial La0.67Sr0.33MnO3-δ thin films | Shim In Bo; Oh Young-Jei |
| - | Realization of large TMR using pure spin filtering barriers with no FM electrodes involved | Guo-Xing Miao; M. Muller; Chang, Joonyeon; J.S.Moodera |
| 2010-05-01 | Spin polarization decay in magnetic tunnel junctions with semimetal-inserted layers | Lee, Kyoung-Il; Roh, Jong Wook; Lee, Kiyoung; Chang, Joonyeon; Shin, Kyung-Ho; Johnson, Mark; Lee, Wooyoung |
| 2002-02 | Temperature dependence of the tunneling magnetoresistance for tunnel junctions | Lee, JH; Chang, IW; Byun, SJ; Rhie, K; Shin, KH; Lee, KI; Ha, JG; Lee, BC |
| 2002-02 | TMR of double spin-valve type AF/FM/I/FM/I/FM/AF magnetic tunneling junctions | Lee, JH; Chang, IW; Byun, SJ; Hong, TK; Rhie, K; Lee, WY; Shin, KH; Hwang, C; Lee, SS; Lee, BC |
