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Showing results 1 to 3 of 3

Issue DateTitleAuthor(s)
2008-05-12Efficient suppression of charge trapping in ZnO-based transparent thin film transistors with novel Al2O3/HfO2/Al2O3 structureChang, Seongpil; Song, Yong-Won; Lee, Sanggyu; Lee, Sang Yeol; Ju, Byeong-Kwon
2020-11-06Real-time effect of electron beam on MoS(2)field-effect transistorsLee, Kookjin; Lee, Hyebin; Kim, Yanghee; Choi, Junhee; Ahn, Jae-Pyoung; Shin, Dong Hoon; Cho, Young-Hoon; Jang, Ho-kyun; Lee, Sang Wook; Shin, Jinwoo; Ji, Hyunjin; Kim, Gyu-Tae
2012-04-30The charge trapping characteristics of Si3N4 and Al2O3 layers on amorphous-indium-gallium-zinc oxide thin films for memory applicationJung, Ji Sim; Rha, Sang-Ho; Kim, Un Ki; Chung, Yoon Jang; Jung, Yoon Soo; Choi, Jung-Hae; Hwang, Cheol Seong
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