| 1992-07 | Behavior of the two-dimensional electron gas in Si delta-doped GaAs grown by atmospheric MOCVD. | 김용; 김태환; 김무성; 민석기 |
| 1992-10 | DIFFUSION LIMITING MECHANISM IN SI-DELTA DOPED GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION | KIM, Y; MIN, SK; KIM, TW |
| 1991-02 | DISLOCATION-ACCELERATED DIFFUSION OF SI IN DELTA-DOPED GAAS GROWN ON SILICON SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION | KIM, Y; KIM, MS; MIN, SK; LEE, CC |
| 1992-12 | ELECTRIC SUBBANDS IN SI-DELTA-DOPED GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION | KIM, TW; KIM, Y; KIM, MS; KIM, EK; MIN, SK |
| 1994-09-01 | MAGNETOTRANSPORT AND ELECTRON SUBBAND STUDIES OF EDGE DELTA-DOPED AL0.27GA0.73AS/GAAS SINGLE QUANTUM-WELLS | KIM, TW; YOO, KH; LEE, KS; KIM, Y; MIN, SK; YOM, SS; LEE, SJ |
| 1993-02 | Properties of center and edge δ-doped GaAs-AlGaAs quantum wells grown by metalorganic chemical vapor deposition | Kim, Y.; Kim, M.-S.; Min, S.-K. |
| 1990-09 | SELENIUM AND SILICON DELTA-DOPING PROPERTIES OF GAAS BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION | KIM, Y; KIM, MS; MIN, SK; LEE, CC; YOO, KH |
| 1994-10 | STRUCTURAL, ELECTRICAL AND OPTICAL-PROPERTIES OF SI DELTA-DOPED AL0.27GA0.73AS/GAAS SINGLE QUANTUM-WELLS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION | KIM, TW; KIM, Y; Min, Suk Ki; LEE, JY; LEE, SJ |
