| 1999-07 | Bismuth composition control of SrBi2TaNbO9 thin films by heat treating Bi2O3-inserted heterostructure | Park, YB; Lee, JK; Jung, HY; Park, JW |
| 1998-03 | Characteristics of metal/ferroelectric/insulator/semiconductor field effect transistors using a Pt/SrBi2Ta2O9/Y2O3/Si structure | Lee, HN; Lim, MH; Kim, YT; Kalkur, TS; Choh, SH |
| 1997-01 | Crystal orientation dependencies on the ferroelectric properties of SrBi2Ta2O9, CaBi2Ta2O9 thin films fabricated by the rf magnetron sputtering technique | Lee, JK; Song, TK; Kim, TS; Jung, HJ |
| - | Crystal structure and ferroelectric properties of poly(vinylidene fluoride)-carbon nano tube nanocomposite | Lee Ji Seok; Kim Gwang Ho; kim hyung tae; Hong, Soon Man |
| - | Deposition of Iridium Oxide Thin Films as Bottom Electrodes of Ferroelectric Capacitors | Hur Jae Sung; Choi Hoon Sang; Jong-Han Lee; Choi In Hoon; Moon, Sung Wook; Shin, Hyun Joon |
| 2006-12 | Deposition of LiNbO3 thin films for selective etching | Kim, Hyun-Jun; Kim, Dal-Young; Ha, Jong-Yoon; Kang, Chong-Yun; Sung, Man Young; Cho, Bong Hee; Yoon, Seok-Jin; Kim, Hyun-Jai |
| 2006-12 | Dielectric resonators loaded by ferroelectric varactors for tunable Ka band filter | Buslov, O. Yu.; Kang, Chong-Yun; Keis, V. N.; Kotelnikov, I. V.; Shimko, A. Yu; Ivanova, M. F.; Tumarkin, A. V.; Karmanenko, S. F.; Kozyrev, A. B. |
| - | Domain Wall Motion of Ferroelectric Material under a Bias in TEM | Hye Jung Chang; S.V. Kalinin; P. Wu; S.Y. Yang; P. Yu; R. Ramesh; L.Q. Chen; S.J. Pennycook; A. Borisevich |
| - | Domain Wall Motion of Ferroelectric Materials under a Bias in (S)TEM | Hye Jung Chang; S.V.Kalinin; S.J.Pennycook; A.Borisevich; P.Wu; L.Q. Chen; S.Y.Yang; P.Yu; R. Ramesh |
| 1998-01 | Effect of Sr content on the oriented growth of SrBi2Ta2O9 thin films | 배철휘; 이전국; 이시형; 정형진 |
| 1995-01 | Effect of Yttrium Dopping on the Ferroelectric Fatigue and Switching Characteristics of Pb(Zr0.65Ti0.35)O3 Thin Films Prepared By Sol-Gel Processing | Kim, J.H.; Paik, D.S.; Park, C.Y.; Jeong, H.J. |
| 2005-09 | Effects of annealing process on dielectric properties of (Ba,Sr)TiO3 thin films grown by RF magnetron sputtering | Ha, JY; Choi, JW; Kang, CY; Karmanenko, SF; Yoon, SJ; Choi, DJ; Kim, HJ |
| 1999-09-15 | Effects of Bi-Pt alloy on electrical characteristics of Pt/SrBi2Ta2O9/CeO2/Si ferroelectric gate structure | Kim, YT; Shin, DS; Park, YK; Choi, IH |
| 1998-09 | Effects of morphological changes of Pt/SrBi2Ta2O9 interface on the electrical properties of ferroelectric capacitor | Shin, DS; Lee, HN; Lee, CW; Kim, YT; Choi, IH |
| 2001-04 | Electrical characteristics of Pt/SrBi2Ta2O9/Ta2O5/Si using Ta2O5 as the buffer layer | Choi, HS; Kim, YT; Kim, SI; Choi, IH |
| 1996-05 | Electrical characterization of Pt/SrBi2Ta2O9/Pt capacitors fabricated by the pulsed laser ablated deposition technique | Lee, JK; Jung, HJ; Auciello, O; Kingon, AI |
| 1998-08 | Electrical properties of Pt/SrBi2Ta2O9/CeO2/SiO2/Si structure for nondestructive readout memory | Shin, DS; Lee, HN; Kim, YT; Choi, IH; Kim, BH |
| - | Electrical properties of Pt/SrBi2Ta2O9/Ta2O5/Si ferroelectric gate structure | 최훈상; Kim Yong Tae; Kim Seong Il; 최인훈; Hoon Sang Choi; Seong Il Kim; In-Hoon Choi |
| 2003-03-03 | Electro-optic characteristics of (001)-oriented Ba0.6Sr0.4TiO3 thin films | Kim, DY; Moon, SE; Kim, EK; Lee, SJ; Choi, JJ; Kim, HE |
| 2012-07 | Emerging memories: resistive switching mechanisms and current status | Jeong, Doo Seok; Thomas, Reji; Katiyar, R. S.; Scott, J. F.; Kohlstedt, H.; Petraru, A.; Hwang, Cheol Seong |
| 1999-09 | Ex situ growth of the c-axis preferred oriented SrBi2Ta2O9 thin films on Pt/Ti/SiO2/Si substrates | Bae, C; Lee, JK; Lee, SH; Jung, HJ |
| - | Fabrication and characterization of Pt/SrBi2Ta2O9(SBT)/CeO2/Si metal ferroelectric insulator semiconductor field effect transistor (MFISFET) memory by using the inductively coupled plasma reactive ion etching (ICP RIE) process | Sun Il Shim; Jung Ho Park; Young Suk Kwon; Kim, Seong Il; Kim, Yong Tae |
| 2006-08 | Ferroelectric nanotubes array growth in anodic porous alumina nanoholes on silicons | Min, Hyung-Seob; Lee, Jeon-Kook |
| 2016-01-08 | Frustration of Negative Capacitance in Al2O3/BaTiO3 Bilayer Structure | Kim, Yu Jin; Park, Min Hyuk; Lee, Young Hwan; Kim, Han Joon; Jeon, Woojin; Moon, Taehwan; Do Kim, Keum; Jeong, Doo Seok; Yamada, Hiroyuki; Hwang, Cheol Seong |
| 2012-09 | Ge2Sb2Te5 as a Ferroelectric: A Single-Element Low-Voltage Dynamic Memory | Lee, Sang Hyeon; Kim, Moonkyung; Cheong, Byung-Ki; Lee, Jo-Won; Tiwari, Sandip |
| 2006-12 | Improvement in tunability and dielectric loss of BSTZ ferroelectric thin films using post-annealing | Ha, Jong-Yoon; Kang, Chong-Yun; Choi, Ji-Won; Sim, Sung-Hun; Karmanenko, S. F.; Yoon, Seok-Jin; Kim, Hyun-Jai |
| 2003-11-01 | Improvement of electrical properties of ferroelectric gate oxide structure by using Al2O3 thin films as buffer insulator | Choi, HS; Lim, GS; Lee, JH; Kim, YT; Kim, SI; Yoo, DC; Lee, JY; Choi, IH |
| 1998-11 | Improvement of ferroelectric properties by heat treating SrBi2(Ta1-xNbx)(2)O-9/Bi2O3/SrBi2(Ta1-xNbx)(2)O-9 heterostructure | Park, YB; Lee, JK; Jung, HJ; Park, JW |
| 2007-04-16 | Influence of applied electric field annealing on the microwave properties of (Ba0.5Sr0.5)TiO3 thin films | Cho, Kwang-Hwan; Lee, Chil-Hyoung; Kang, Chong-Yun; Yoon, Seok-Jin; Lee, Young-Pak |
| 2020-01 | Investigation of phases and chemical states of tin titanate films grown by atomic layer deposition | Chung, Hong Keun; Pyeon, Jung Joon; Baek, In-Hwan; Lee, Ga-Yeon; Lee, Hansol; Won, Sung Ok; Han, Jeong Hwan; Chung, Taek-Mo; Park, Tae Joo; Kim, Seong Keun |
