Browsing bySubjectleakage current

Jump to:
All A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
  • Sort by:
  • In order:
  • Results/Page
  • Authors/Record:

Showing results 1 to 15 of 15

Issue DateTitleAuthor(s)
2015-07Asymmetry in electrical properties of Al-doped TiO2 film with respect to bias voltageJeon, Woojin; Rha, Sang Ho; Lee, Woongkyu; An, Cheol Hyun; Chung, Min Jung; Kim, Sang Hyun; Cho, Cheol Jin; Kim, Seong Keun; Hwang, Cheol Seong
2007-05Carbon nanotube-based triode field emission lamps using metal meshes with spacersCho, Woo-Sung; Lee, Hyeon-Jae; Lee, Yang-Doo; Park, Jung-Ho; Kim, Jai-Kyeong; Lee, Yun-Ili; Ju, Byeong-Kwon
2014-05-28Controlling the Al-Doping Profile and Accompanying Electrical Properties of Rutile-Phased TiO2 Thin FilmsJeon, Woojin; Rha, Sang Ho; Lee, Woongkyu; Yoo, Yeon Woo; An, Cheol Hyun; Jung, Kwang Hwan; Kim, Seong Keun; Hwang, Cheol Seong
1992-01Dielectric properties and leakage current characteristics of Ta2O5 thin film prepared by sol-gel process오태성; 이창봉; 이병찬; 오영제; 김윤호
1998-12Effects of BF2 and B implantation-doping on crystalline degradation of pseudomorphic metastable Ge0.06Si0.94Im, S; Oh, MS; Joo, MH; Kim, HB; Kim, HK; Song, JH
1999-01Effects of BF2+ implantation on the strain-relaxation of pseudomorphic metastable Ge0.06Si0.94 alloy layersOh, MS; Joo, MH; Im, S; Kim, HB; Kim, HK; Song, JH
-Effects of Bi content on electrical properties of Pt/SrBi2Nb2O9/Si ferroelectric gate structureKANG. DONGHOON; 최훈상; 이관; Kim Yong Tae; 이종한; 이건식; Kim Seong Il; 최인훈
1990-02-01EFFECTS OF LEAKAGE CURRENT ON ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY SIGNALS FOR MIDGAP LEVELS IN GAASKIM, EK; CHO, HY; MIN, SK; CHOH, SH; NAMBA, S
1998-09Effects of morphological changes of Pt/SrBi2Ta2O9 interface on the electrical properties of ferroelectric capacitorShin, DS; Lee, HN; Lee, CW; Kim, YT; Choi, IH
2002-06Effects of NH3 plasma treatment on methyl silsequioxane for copper multi-level interconnectSim, HS; Kim, YT; Jeon, H
1997-01Electrical properties of Pb(Zr0.52Ti0.48)O-3 thin films prepared by sol-gel processingPaik, DS; Shin, HY; Choi, HW; Park, YW; Yoon, SJ; Park, CY
2015-11Improved Dielectric Properties of CaCu3Ti4O12 films with a CaTiO3 Inter layer on Pt/TiO2/SiO2/Si Substrates Prepared by Pulsed Laser DepositionLee, Sung-Yun; Kim, Hui Eun; Jo, William; Kim, Young-Hwan; Yoo, Sang-Im
-Improvement of electrical properties by controlling nickel plating termperatures for all solid alumina capacitorsJeong Myung sun; 주병권; Oh, Young-Jei; Lee, Jeon Kook
1999-04Parameter extraction in non-ideal thermionic emission diodesLee, JI; Brini, J; Boussey, J; Dimitriadis, CA
2014-12-24Structure and Electrical Properties of Al-Doped HfO2 and ZrO2 Films Grown via Atomic Layer Deposition on Mo ElectrodesYoo, Yeon Woo; Jeon, Woojin; Lee, Woongkyu; An, Cheol Hyun; Kim, Seong Keun; Hwang, Cheol Seong

BROWSE