| 2004-07 | A micro-photoluminescence study of vertically stacked InGaAs-GaAs double-layer quantum dots | Choi, YC; Kim, TG; Park, YM; Park, YJ |
| 2022-09 | A Novel 19× 19 Superstructure in Epitaxially Grown 1T-TaTe2 | Hwang, Jinwoong; Jin, Yeongrok; Zhang, Canxun; Zhu, Tiancong; Kim, Kyoo; Zhong, Yong; Lee, Ji-Eun; Shen, Zongqi; Chen, Yi; Ruan, Wei; Ryu, Hyejin; Hwang, Choongyu; Lee, Jaekwang; Crommie, Michael F.; Mo, Sung-Kwan; Shen, Zhi-Xun |
| - | Absorption properties of the epitaxial Alx-Ga1-xN grown by plasma induced molecular beam epitaxy | Jewon Kim; SON CHANG-SIK; 심선일; 최인훈; PARK YOUNG KYUN; Kim Yong Tae; O. Ambacher; M. Stutzmann |
| - | Auger electron microscopy study of AlGaN grown by molecular beam epitaxy | Jewon Kim; SON CHANG-SIK; PARK YOUNG KYUN; Kim Yong Tae; 최인훈 |
| 2005-02 | Bandgap engineering of self-assembled InAs quantum dots with a thin AlAs barrier | Jung, SI; Yoon, JJ; Park, HJ; Park, YM; Jeon, MH; Leem, JY; Lee, CM; Cho, ET; Lee, JI; Kim, JS; Son, JS; Kim, JS; Lee, DY; Han, IK |
| 2011-11-07 | Clarification of enhanced ferromagnetism in Be-codoped InMnP fabricated using Mn/InP:Be bilayers grown by molecular beam epitaxy | Shon, Yoon; Lee, Sejoon; Yoon, Im Taek; Jeon, H. C.; Lee, D. J.; Kang, T. W.; Song, J. D.; Yoon, Chong S.; Kim, D. Y.; Park, C. S. |
| 2001-06 | Defect generation in multi-stacked InAs quantum dot/GaAs structures | Roh, CH; Park, YJ; Kim, KM; Park, YM; Kim, EK; Shim, KB |
| 2013-01 | Design and Fabrication of 1.35-mu m Laser Diodes With Full Digital-Alloy InGaAlAs MQW | Heo, Duchang; Song, Jin Dong; Han, Il Ki; Choi, Won Jun; Lee, Yong Tak |
| 2004-08 | Distribution of Ge self-assembled quantum dots on SixGe1-x buffer layers | Chang, J; Kim, H |
| - | Effect of Si doping on InAs/GaAs quantum dots | 조광식; 윤석호; 황희돈; 윤의준; 박영민; Park Young Ju; KIM EUN KYU; LIM YOUNG SU; 이정용 |
| 2000-12 | Effects of a Si molecular beam on the formation of InAs quantum dots | Park, YM; Park, YJ; Kim, KM; Roh, CH; Hyon, CK; Kim, EK; Yoo, KH |
| 2005-07-01 | Effects of growth temperature and arsenic pressure on size distribution and density of InAs quantum dots on Si (001) | Zhao, ZM; Hul'ko, O; Kim, HJ; Liu, J; Shi, B; Xie, YH |
| 2004-04-15 | Electrical properties and ultrafast photo-response of InGaAs/InP grown by low-temperature molecular beam epitaxy with a GaAs decomposition source | Kim, JM; Lee, YT; Song, JD; Kim, JH |
| 2006-03 | Electron transport in high quality undoped ZnO film grown by plasma-assisted molecular beam epitaxy | Jung, YS; Kononenko, OV; Choi, WK |
| 2004-09-06 | Enhanced Curie temperature of InMnP : Zn-T-C similar to 300 k | Shon, Y; Jeon, HC; Park, YS; Lee, WC; Lee, SJ; Kim, DY; Kim, HS; Kim, HJ; Kang, TW; Park, YJ; Yoon, CS; Chung, KS |
| 2006-12-29 | Enhanced Curie temperature persisting between 100 and 200 K (similar to 50 K by theory) with Mn (similar to 0.290%) based on InMnP : Zn | Shon, Yoon; Jeon, H. C.; Lee, Sejoon; Lee, S. -W.; Kim, D. Y.; Kang, T. W.; Kim, Eun Kyu; Yoon, Chong S.; Kim, C. K.; Park, Y. J.; Kim, Yongmin; Baik, J. M.; Lee, J. L. |
| 2008-10-06 | Epitaxial growth of MgO and Fe/MgO/Fe magnetic tunnel junctions on (100)-Si by molecular beam epitaxy | Miao, G. X.; Chang, J. Y.; van Veenhuizen, M. J.; Thiel, K.; Seibt, M.; Eilers, G.; Muenzenberg, M.; Moodera, J. S. |
| 2023-02 | GaAs/Si Tandem Solar Cells with an Optically Transparent InAlAs/GaAs Strained Layer Superlattices Dislocation Filter Layer | Kim, Yeonhwa; Madarang May Angelu; Ju Eun Kyo; Laryn Tsimafei; Chu, Rafael Jumar; Kim Tae Soo; Ahn, Dae-Hwan; Kim, Taehee; Lee, In-Hwan; Choi, Won Jun; Jung, Daehwan |
| - | Growth and characterization of GaAs layer by molecular beam epitaxy. | KIM EUN KYU; Min Suk-Ki; S. W. Lee; H. Y. Cho; H. S. Kim; J. H. Park |
| 2006-06 | Hetero-epitaxial ZnO 버퍼층이 As-doped ZnO 박막의증착조건에 미치는 영향 | 이홍찬; 최원국; 심광보; 오영제 |
| 2021-11-24 | High-Performance Flexible InAs Thin-Film Photodetector Arrays with Heteroepitaxial Growth Using an Abruptly Graded in xAl1- xAs Buffer | Woo, S.; Ryu, G.; Kang, S.S.; Kim, T.S.; Hong, N.; Han, J.-H.; Chu, R.J.; Lee, I.-H.; Jung, D.; Choi, W.J. |
| 2003-01 | Influence of a buried misfit dislocation network on the pyramid-to-dome transition size of Ge self-assembled quantum dots on Si(001) | Kim, HJ; Chang, JY; Xie, YH |
| 2004-10-01 | MBE growth and optical properties of digital-alloy 1.55 mu m multi-quantum wells | Song, JD; Choi, WJ; Kim, JM; Chang, KS; Lee, YT |
| 2006-12-15 | MBE growth and optical properties of highly tensile-strained In1-xGaxAs/In-0.52(Ga0.4Al0.6)(0.48)As multi-quantum-wells using digital alloy | Kim, J. M.; Park, C. Y.; Lee, Y. T.; Song, J. D. |
| 2004-07 | Nanocrystal-conjugated polymer photovoltaic devices | Kim, JY; Chung, IJ; Kim, YC; Yu, JW |
| 2005-11-01 | Optical properties of digital-alloy In-0.49(Ga1-zAlz0.51P/GaAs and InGaP/In-0.49(Ga1-zAlz)(0.51)P multi-quantum wells grown by molecular-beam epitaxy | Kim, JM; Park, CY; Lee, YT; Song, JD |
| 2023-12 | Reduction of Structural Defects in the GaSb Buffer Layer on (001) GaP/Si for High Performance InGaSb/GaSb Quantum Well Light-Emitting Diodes | Yeon, Eungbeom; Woo, Seungwan; Chu, Rafael Jumar Abella; In-Hwan Lee; Ho Won Jang; Jung, Dae hwan; Choi, Won Jun |
| 2003-01 | Shape and interband transition behavior of InAs quantum dots dependent on number of stacking cycles | Kim, KM; Park, YJ; Roh, CH; Park, YM; Kim, EK; Hyon, CK; Park, JH; Kim, TW |
| 2004-11-15 | State filling phenomena in modulation-doped InAs quantum dots | Park, YM; Park, YJ; Kim, KM; Shin, JC; Song, JD; Lee, JI; Yoo, KH |
| 2000-03 | Structural characteristics on InAs quantum dots multi-stacked on GaAs(100) substrates | 노정현; 박용주; 김은규; 심광보 |
