1998-02-01 | Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells | Yuan, S; Kim, Y; Tan, HH; Jagadish, C; Burke, PT; Dao, LV; Gal, M; Chan, MCY; Li, EH; Zou, J; Cai, DQ; Cockayne, DJH; Cohen, RM |
1997-03 | InGaAs layer effect on the growth of AlGaAs/GaAs quantum wires on V-grooved InGaAs/GaAs substrates | Lee, MS; Kim, EK; Kim, SI; Hwang, SM; Kim, CK; Min, SK; Lee, JY |
2004-10-01 | MBE growth and optical properties of digital-alloy 1.55 mu m multi-quantum wells | Song, JD; Choi, WJ; Kim, JM; Chang, KS; Lee, YT |
2006-12-15 | MBE growth and optical properties of highly tensile-strained In1-xGaxAs/In-0.52(Ga0.4Al0.6)(0.48)As multi-quantum-wells using digital alloy | Kim, J. M.; Park, C. Y.; Lee, Y. T.; Song, J. D. |
2001-08-09 | Oscillatory behaviour of magnetic and magneto-optical properties in Fe-Pt thin-film structures | Shalyguina, EE; Shin, KH |
2002-09 | Polarization-insensitive quantum-well semiconductor optical amplifiers | Koonath, P; Kim, S; Cho, WJ; Gopinath, A |
2009-06 | Spin Interaction Effect on Potentiometric Measurements in a Quantum Well Channel | Park, Youn Ho; Koo, Hyun Cheol; Kim, Kyung Ho; Kim, Hyung-Jun; Han, Suk-Hee |
1999-07 | Transmission spectra of InGaN single quantum wells and InGaN GaN heterostructures grown by metalorganic chemical vapor deposition | Kim, JW; Park, YK; Kim, YT; Son, CS; Choi, IH; Ambacher, O; Stutzmann, M |