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Showing results 6 to 7 of 7

Issue DateTitleAuthor(s)
2023-06Improvement of polarization switching in ferroelectric transistor by interface trap reduction for brain-inspired artificial synapsesJin, D. -G.; Kim, S. -G.; Jeon, H.; Park, E. -J.; Kim, S. -H.; Kim, Y-Y.; Yu, H. -Y.
2023-12Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxideLee, Jaewook; Yang, Kun; Kwon, Ju Young; Kim, Ji Eun; Han, Dong In; Lee, Dong Hyun; Yoon, Jung Ho; Park, Min Hyuk
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