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Showing results 18 to 31 of 31

Issue DateTitleAuthor(s)
2007-07Parasitic bipolar junction transistors in a floating-gate MOSFET for fluorescence detectionShin, Kyeong-Sik; Pack, Kyeong-Kap; Park, Jung-Ho; Kim, Tae-Song; Ju, Byeong-Kwon; Kang, Ji Yoon
-Reduction of saturated transconductance in LDD MOSFETs.KANG KWANG NHAM; Lee Jung Il; LEE MYOUNG BOG; Yoo Jong Lee
1990-01Reduction of transconductance in saturation region of short channel LDD NMOSFETs.강광남; 이명복; 이정일
1991-01Simple model for gate-voltage dependent parasitic resistance in short channel lightly doped drain metal oxide semiconductor field effect transistors.강광남; 이정일; 이명복; S. Y. Lee; 윤경식
1993-03Simple Model for the Second Substrate Current Hump in Short-Channel LDD MOSFETsLEE, MYOUNG BOG; 이정일; 강광남; K. S. Yoon; K. Y. Lim; H. Lim
1993-01Simple Semi-Analytic Model for the Substrtate Current of Short Channel MOSFETs with Lightly Doped DrainsLEE, MYOUNG BOG; 이정일; 강광남; K. S. Yoon; K. Y. Lim; H. Lim
-The characterization of MOSFET type photosenser for CMOS image sensorK. S. Shin; K. K. Paek; Y. S. Lee; S. I. Kim; J. H. Park; LEE YUN HI; Ju Byeong Kwon
-The characterization of the modified floating gate MOSFETs for photodetectorK. S. Shin; K. K. Paek; Y. S. Lee; LEE YUN HI; S. I. Kim; J. H. Park; Ju Byeong Kwon
2015-08The Schottky barrier modulation at PtSi/Si interface by strain and structural deformationSrivastava, Pooja; Shin, Mincheol; Lee, Kwang-Ryeol; Mizuseki, Hiroshi; Kim, Seungchul
1989-01The shift of threshold voltage and subthreshold current curve in LDD MOSFET degraded under difference DC stress-biases.강광남; 이명복; 이정일
2014-02Thermal analysis of self-heating in saddle MOSFET devicesOh, Hyun Gon; Jeong, Cherlhyun; Cho, Il Hwan
-Thin body n- and p-GaAs FET on Si for CMOS integrationShim Jae Phil; Ju, Gunwu; kim seong kwang; KIM HANSUNG; Sanghyeon Kim; Kim Hyung-jun
-Wafer Bonging Process for III-V MOSFET and Monolithic 3D Integration on Si SubstratesKim Hyung-jun; Sanghyeon Kim
2007-07탑 게이트 탄소나노튜브 트랜지스터 특성 연구박용욱; 윤석진

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