Showing results 1 to 3 of 3
Issue Date | Title | Author(s) |
---|---|---|
2024-01 | A Back-Illuminated SPAD Fabricated With 40 nm CMOS Image Sensor Technology Achieving Near 40% PDP at 940 nm | Eun sung Park; Ha, Won-Yong; Sung, Park Hyo; Eom Do Yoon; Choi, Hyun Seung; Ahn, Daehwan; Choi, Woo-Young; Lee, Myung-Jae |
2019-09 | First Near-Ultraviolet- and Blue-Enhanced Backside-Illuminated Single-Photon Avalanche Diode Based on Standard SOI CMOS Technology | Lee, Myung-Jae; Sun, Pengfei; Pandraud, Gregory; Bruschini, Claudio; Charbon, Edoardo |
2024-01 | SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP | Won-Yong Ha; Eun sung Park; Eom Do Yoon; Sung, Park Hyo; Gramuglia, Francesco; Keshavarzian, Pouyan; Kizilkan, Ekin; Bruschini, Claudio; Chong, Daniel; Tan, Shyue Seng; Tng, Michelle; Quek, Elgin; Charbon, Edoardo; Choi, Woo-Young; Lee, Myung-Jae |