| 2005-02 | Effect of deposition period on structural and optical properties of InGaAs/GaAs quantum dots formed by InAs/GaAs short-period superlattices | Song, JD; Park, YJ; Han, IK; Choi, WJ; Cho, WJ; Lee, JI; Cho, YH; Lee, JY |
| 2010-02 | Effect of growth parameters on the formation of three-dimensional InAs islands on (001) silicon substrate | Lim, J. Y.; Song, J. D.; Choi, W. J.; Yang, H. S. |
| 2007-09-01 | Effect of rapid thermal annealing on the noise properties of InAs/GaAs quantum dot structures | Arpatzanis, N.; Tsormpatzoglou, A.; Dimitriadis, C. A.; Song, J. D.; Choi, W. J.; Lee, J. I.; Charitidis, C. |
| - | Effect of Si doping on InAs/GaAs quantum dots | 조광식; 윤석호; 황희돈; 윤의준; 박영민; Park Young Ju; KIM EUN KYU; LIM YOUNG SU; 이정용 |
| - | Effects of AlGaAs inserting layer on the optical properties of InGaAs/GaAs quantum dots | 박세기; Park Young Ju; 박영민; KIM HEO JEN; KIM EUN KYU; 이천 |
| 2001-12 | Effects of AlGaAs inserting layer on the optical properties of InGaAs/GaAs quantum dots | Park, SK; Park, YJ; Park, YM; Kim, HJ; Kim, EK; Lee, C |
| 2002-06 | Effects of doping profile on characteristics of InAs quantum dots | Park, YM; Park, YJ; Kim, KM; Shin, JC; Kim, EK; Son, MH; Hwang, SW; Yoo, KH |
| 2005-07-01 | Effects of growth temperature and arsenic pressure on size distribution and density of InAs quantum dots on Si (001) | Zhao, ZM; Hul'ko, O; Kim, HJ; Liu, J; Shi, B; Xie, YH |
| 2005-02 | Effects of rapid thermal annealing on the energy levels of InAs/InP self-assembled quantum dots | Kim, JS; Kim, EK; Park, K; Yoon, E; Han, IK; Park, YJ |
| 2005-01 | Effects of Si-doped GaAs layer on optical properties of InAs quantum dots | Park, YM; Park, YJ; Kim, KM; Lee, JI; Yoo, KH |
| 2004-01-01 | Electrical and optical characterizations of self-assembled quantum dots formed by the atomic layer epitaxy technique | Park, YM; Park, YJ; Kim, KM; Shin, JC; Song, JD; Lee, JI; Yoo, KH |
| 2005-12 | Electronic subband structure in InAs-GaAs quantum dots in an asymmetric-well infrared photodetector structure | Nam, H; Song, JD; Choi, WJ; Lee, JI; Yang, H; Kwack, HS; Cho, YH |
| 2014-02-03 | Electronic-state-controlled reset operation in quantum dot resonant-tunneling single-photon detectors | Weng, Q. C.; An, Z. H.; Zhu, Z. Q.; Song, J. D.; Choi, W. J. |
| 2006-05 | Energy states in InAs-GaAs quantum dots-in-asymmetric-well infrared photodetector structure | Nam, H. D.; Doyennette, L.; Song, J. D.; Choi, W. J.; Yang, H. S.; Lee, J. I.; Julien, F. H. |
| 2005-05 | Estimation of built-in dipole moment in InAs quantum dots | Park, YM; Park, YJ; Song, JD; Lee, JI |
| 2005-02 | Evidence of coupling between InAs self-assembled quantum dots in thin GaAs buffer layer | Cho, ET; Lee, HD; Lee, DW; Lee, JI; Jung, SI; Yoon, JJ; Leem, JY; Han, IK |
| 2020-11-23 | Excitation and temperature dependence of the broad gain spectrum in GaAs/AlGaAs quantum rings | Jang, Juyeong; Lee, Seunghwan; Kim, Minju; Woo, Sunwoo; Kim, Inhong; Kyhm, Jihoon; Song, Jindong; Taylor, Robert A.; Kyhm, Kwangseuk |
| 2017-08-16 | Experimental triple-slit interference in a strongly driven V-type artificial atom | Dada, Adetunmise C.; Santana, Ted S.; Koutroumanis, Antonios; Ma, Yong; Park, Suk-In; Song, Jindong; Gerardot, Brian D. |
| 2008-06 | Fabrication and optical properties of CdSe/ZnS core/shell quantum-dot multilayer film and hybrid organic/inorganic light-emitting diodes fabricated by using layer-by-layer assembly | Il Jung, Soon; Yun, Ilgu; Han, Il Ki; Cho, Sung M.; Lee, Joo In |
| 2003-07 | Fabrication of optical sources using InGaAs quantum dots grown by atomic layer epitaxy | Heo, DC; Han, IK; Song, JD; Choi, WJ; Lee, JI; Lee, JY; Lee, JI; Jeong, JC |
| 2006-09-30 | Formation of self-assembled quantum dots of iron oxide thin films by spray pyrolysis from non-aqueous medium | Desai, J. D.; Pathan, H. M.; Min, Sun-Ki; Jung, Kwang-Deog; Joo, Oh-Shim |
| 2010-04-02 | Gain-dependent linewidth enhancement factor in the quantum dot structures | Kim, Kyoung Chan; Han, Il Ki; Lee, Jung Il; Kim, Tae Geun |
| 2016-04-08 | Graphene quantum dots as a highly efficient solution-processed charge trapping medium for organic nano-floating gate memory | Ji, Yongsung; Kim, Juhan; Cha, An-Na; Lee, Sang-A; Lee, Myung Woo; Suh, Jung Sang; Bae, Sukang; Moon, Byung Joon; Lee, Sang Hyun; Lee, Dong Su; Wang, Gunuk; Kim, Tae-Wook |
| 2011-09 | Growth of high-quality InSb layer on (001) Si substrate with an initial intermediate-layer of InAs quantum dots | Lim, J. Y.; Song, J. D.; Choi, W. J.; Ahn, J. P.; Yang, H. S. |
| - | Growth of low density InGaAs quantum dots using MEMBE | Nam Ki Cho; Sung-Jun Park; SONG, JIN-DONG; Choi, Won Jun; Lee, Jung Il |
| 2003-05-29 | High power broadband InGaAs/GaAs quantum dot superluminescent diodes | Heo, DC; Song, JD; Choi, WJ; Lee, JI; Jung, JC; Han, IK |
| 2007-09-13 | High power broadband superluminescent diodes with chirped multiple quantum dots | Yoo, Y. C.; Han, I. K.; Lee, J. I. |
| 2004-12 | High power laser diodes/superluminescent diodes | Han, IK |
| 2017-05-17 | High-Efficiency Photovoltaic Devices using Trap-Controlled Quantum-Dot Ink prepared via Phase-Transfer Exchange | Aqoma, Havid; Al Mubarok, Muhibullah; Hadmojo, Wisnu Tantyo; Lee, Eun-Hye; Kim, Tae-Wook; Ahn, Tae Kyu; Oh, Seung-Hwan; Jang, Sung-Yeon |
| 2019-10 | High-Performance O-Band Quantum-Dot Semiconductor Optical Amplifiers Directly Grown on a CMOS Compatible Silicon Substrate | Liu, Songtao; Norman, Justin; Dumont, Mario; Jung, Daehwan; Torres, Alfredo; Gossard, Arthur C.; Bowers, John E. |
