2011-03-21 | Effect of channel thickness on density of states in amorphous InGaZnO thin film transistor | Lee, Sang Yeol; Kim, Do Hyung; Chong, Eugene; Jeon, Yong Woo; Kim, Dae Hwan |
2012-03-01 | Effect of magnesium oxide passivation on the performance of amorphous indium-gallium-zinc-oxide thin film transistors | Yoo, Dong Youn; Chong, Eugene; Kim, Do Hyung; Ju, Byeong Kwon; Lee, Sang Yeol |
2011-07 | Effect of oxygen on the threshold voltage of a-IGZO TFT | Chong, Eugene; Chun, Yoon Soo; Kim, Seung Han; Lee, Sang Yeol |
2011-07 | Effects of gate insulators on the performance of a-IGZO TFT fabricated at room-temperature | Chun, Yoon Soo; Chang, Seongpil; Lee, Sang Yeol |
2012-04-30 | The charge trapping characteristics of Si3N4 and Al2O3 layers on amorphous-indium-gallium-zinc oxide thin films for memory application | Jung, Ji Sim; Rha, Sang-Ho; Kim, Un Ki; Chung, Yoon Jang; Jung, Yoon Soo; Choi, Jung-Hae; Hwang, Cheol Seong |
2010-05 | 공정 변수에 따른 비정질 인듐갈륨징크옥사이드 산화물 반도체 트랜지스터의 전기적 특성 연구 | 정유진; 조경철; 김승한; 이상렬 |
2009-09 | 산화물 박막 트랜지스터 동작에 대한 접촉 저항의 영향 | 이재상; 구상모; 이상렬 |