| 2002-06 | (200)-predominant growth of radio-frequency sputtered SrBi2Ta2O9 thin films | Lee, SH; Lee, JK; Yoon, KH |
| 2002-02 | Structure and properties of Si incorporated tetrahedral amorphous carbon films prepared by hybrid filtered vacuum arc process | Lee, CS; Lee, KR; Eun, KY; Yoon, KH; Han, JH |
| 2002-01 | Growth of ultrahigh carbon-doped InGaAs and its applicationto InP/InGaAs(C) HBTs | Han, JC; Song, JI; Park, SW; Woo, D |
| 2002-01 | Effect of environment on the tribological behavior of Si-incorporated diamond-like carbon films | Yang, SH; Kong, H; Lee, KR; Park, S; Kim, DE |
| 2002-01 | Comparison of TiN and TiAlN as a diffusion barrier deposited by atomic layer deposition | Kim, JY; Kim, HK; Kim, Y; Kim, YD; Kim, WM; Jeon, H |
| 2002-11 | Metalorganic atomic layer deposition of TiN thin films using TDMAT and NH3 | Kim, HK; Kim, JY; Park, JY; Kim, Y; Kim, YD; Jeon, H; Kim, WM |
| 2002-12 | MOCVD of aluminum nitride thin films with a new type of single-source precursor: AlCl3 :(BuNH2)-Bu-t | Joo, OS; Jung, KD; Cho, SH; Kyoung, JH; Ahn, CK; Choi, SC; Dong, Y; Yun, H; Han, SH |
| 2002-11-01 | Alignment of InAs quantum dots on a controllable strain-relaxed substrate using an InAs/GaAs superlattice | Kim, KM; Park, YJ; Park, YM; Hyon, CK; Kim, EK; Park, JH |
| 2002-05-15 | Analytical model for intrinsic residual stress effects and out-of-plane deflections in free-standing thick films | Jeong, JH; Kwon, D; Baik, YJ |
| 2002-06 | Design, synthesis, and application of new Ti precursors compatible with Ba and Sr precursors for BST thin film by MOCVD | Woo, K |
