The characteristics of In0.52Al0.48As/In0.53Ga0.47As heterojunction bipolar transistors illuminated by laser

Title
The characteristics of In0.52Al0.48As/In0.53Ga0.47As heterojunction bipolar transistors illuminated by laser
Authors
김종욱강현일오재응김회종최원준이석한일기우덕하이정일김선호강광남
Keywords
HBT; InAlAs/InGaAs; 광특성
Issue Date
1997-01
Publisher
제 4 회 한국 반도체 학술대회 논문집
Citation
, 105-106
URI
http://pubs.kist.re.kr/handle/201004/10004
Appears in Collections:
KIST Publication > Conference Paper
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