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Growth of InAs layer on GaAs with AlAs0.32Sb0.68 buffer and the effect of thickness of InAs on its physical properties

Authors

Su youn, Kim; SONG, JIN-DONG; T.W. Kim

Citation

ICPS2010, pp.P1-300

Keywords

MBE; AlAsSb buffer layer; InAs on GaAs substrate; structural property; electron mobility; spintronics; coherent THz generation

URI

https://pubs.kist.re.kr/handle/201004/100129

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KIST Conference Paper > Others

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