Electrical Characteristics of Atomic Layer Deposited Tungsten Nitride Diffusion Barrier for Cu Interconnects

Authors
Kim, Yong TaeLee Eui-BokKim, Young-HwanKIM, CHUN KEUNByeong Kwon
Citation
2010 Asia-Pacific Workshop on fundamentals and Applications of Advanced Semiconductor Devices, v.110, no.110, pp.61 - 63
Keywords
ALD; Diffusion barrier; Cu interconnects; Electromigration
URI
https://pubs.kist.re.kr/handle/201004/100193
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KIST Conference Paper > Others
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