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dc.contributor.authorJungsub Kim-
dc.contributor.authorHa Seung Kyu-
dc.contributor.authorChangjae Yang-
dc.contributor.authorJaeyel Lee-
dc.contributor.authorSehun Park-
dc.contributor.authorChoi, Won Jun-
dc.contributor.authorEuijoon Yoon-
dc.date.accessioned2024-01-13T00:30:26Z-
dc.date.available2024-01-13T00:30:26Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/100313-
dc.languageEnglish-
dc.subjectquantum dot-
dc.subjectInAs/InGaAs-
dc.subjectinfrared photodetector-
dc.subjectMOCVD-
dc.subjectdot-in-a-well-
dc.subjectatomic force microscopy-
dc.subjectphotoluminescence-
dc.subjecttop contact layer-
dc.titleThe study of multi-stacked InAs/InGaAs dot-in-a-well structures for quantum dot infrared photodetector by metal organic chemical vapor depostion-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationQuantum Dot 2010-
dc.citation.titleQuantum Dot 2010-
dc.citation.conferencePlaceUK-
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