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dc.contributor.authorHa Seung Kyu-
dc.contributor.authorNam Ki Cho-
dc.contributor.authorSONG, JIN-DONG-
dc.contributor.author박재규-
dc.contributor.author이동한-
dc.contributor.authorChoi, Won Jun-
dc.contributor.authorLee, Jung Il-
dc.date.accessioned2024-01-13T00:30:30Z-
dc.date.available2024-01-13T00:30:30Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/100318-
dc.subjectmigration enhanced epitaxy-
dc.subjectquantum dot-
dc.subjectpower dependent photoluminescence-
dc.subjectlevel spacing-
dc.subjectsingle photon source-
dc.title.alternativeMEE 기법으로 성장한 InGaAs 양자점의 크기 변화에 따른 광발광 특성분석-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitation한국진공학회 제38회 정기학술대회-
dc.citation.title한국진공학회 제38회 정기학술대회-
dc.citation.conferencePlaceKO-
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