Origin of hysteresis of a-IGZO transistor with Al2O3/HfO2/Al2O3 gate insulator

Authors
Jo KyoungchulSeongpil ChangChong EugeneByeong-kwon JuLee Sang Yeol
Citation
ICAMD 2009
URI
https://pubs.kist.re.kr/handle/201004/100486
Appears in Collections:
KIST Conference Paper > Others
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