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dc.contributor.author이정욱-
dc.contributor.author백호선-
dc.contributor.author유지범-
dc.contributor.author김긍호-
dc.contributor.author금동화-
dc.date.accessioned2015-12-02T04:52:21Z-
dc.date.available2015-12-02T04:52:21Z-
dc.date.issued199810-
dc.identifier.citationVOL 11, NO 5, 499-504-
dc.identifier.issn1225-1550-
dc.identifier.other8702-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/10086-
dc.publisher대한금속학회회보-
dc.publisherBull. Kor. Inst. Met. & Mater.-
dc.subjectHydride Vapor Phase Epitaxy(HVPE)-
dc.subjectGaN-buffer-
dc.subjectthick GaN film-
dc.subjectcross sectional TEM-
dc.titleThe effect of low temperature GaN-buffer layer on the growth of thick GaN using HVPE-
dc.typeConference Paper-
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