RF power dependence of stresses in plasma deposited low resistive tungsten films for VLSI devices

Title
RF power dependence of stresses in plasma deposited low resistive tungsten films for VLSI devices
Authors
이창우고민경오환원우상록윤성로김용태박영균고석중
Keywords
diffusion barrier; tungsten; VLSI; PECVD; stress
Issue Date
1998-01
Publisher
한국재료학회지; Korean Journal of Materials Research
Citation
VOL 8, NO 11, 977-981
URI
http://pubs.kist.re.kr/handle/201004/10099
ISSN
1225-0562
Appears in Collections:
KIST Publication > Article
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