Dielectric cap quantum well disordering for band gap tuning of InGaAs/InGaAsP quantum well structure using various combinations of semiconductor-dielectric capping layers

Title
Dielectric cap quantum well disordering for band gap tuning of InGaAs/InGaAsP quantum well structure using various combinations of semiconductor-dielectric capping layers
Authors
조재원이희택최원준우덕하김선호강광남
Keywords
양자우물 무질서화; InGaAs/InGaAsP 양자우물
Issue Date
2002-12
Publisher
Journal of the Korean Vacuum Society
Citation
VOL 11, NO 4, 207-211
URI
http://pubs.kist.re.kr/handle/201004/10469
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE