Disordering of InGaAs/GaAs multi-quantum well structure by impurity-free vacancy diffusion for advanced optoelectronic devices and their integration

Authors
유재수김종민이용탁SONG, JIN-DONG임한조
Citation
Proc. of SPIE, v.5729
Keywords
impurity-free vacancy diffusion
ISSN
0277786
URI
https://pubs.kist.re.kr/handle/201004/104808
Appears in Collections:
KIST Conference Paper > Others
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE