Effects of an InxGa1-xAs asymmetric strain release layer on the optical properties of InAs/GaAs quantum dots

Title
Effects of an InxGa1-xAs asymmetric strain release layer on the optical properties of InAs/GaAs quantum dots
Authors
임재구최은하박용주박영민송진동최원준한일기조운조이정일
Keywords
atomic layer epitaxy; strain release layer; intermixing; photoluminescence
Issue Date
2003-08
Publisher
새물리
Citation
VOL 47, NO 2, 127-132
URI
http://pubs.kist.re.kr/handle/201004/10550
Appears in Collections:
KIST Publication > Article
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