Electrical and optical characterizations of InGaAs quantum dots grown by atomic layer epitaxy technique

Authors
Young Min ParkPark, Young JuKwang Moo KimShin, Jae CheolSONG, JIN-DONGLee, Jung IlKeon-Ho Yoo
Citation
The 10th Korean Conference on Semiconductors, pp.749 - 750
Keywords
InAs/GaAs 양자점; C-V; photoluminescence; atomic layer epitaxy
URI
https://pubs.kist.re.kr/handle/201004/105943
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KIST Conference Paper > Others
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