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dc.contributor.authorS.H. Son-
dc.contributor.authorB.H. Choi-
dc.contributor.authorK.H. Cho-
dc.contributor.authorY.M. Park-
dc.contributor.authorPark Young Ju-
dc.contributor.authorS.W. Hwang-
dc.contributor.authorD. Ahn-
dc.date.accessioned2024-01-13T12:03:48Z-
dc.date.available2024-01-13T12:03:48Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/106666-
dc.languageEnglish-
dc.titleFabrication and characterization of a single electron transistor using n+ GaAs-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitation2002 International Conference on Solid State Devices and Materials, pp.554 - 555-
dc.citation.title2002 International Conference on Solid State Devices and Materials-
dc.citation.startPage554-
dc.citation.endPage555-
dc.citation.conferencePlaceJA-
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