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The postannealing effects of GaN epilayer grown on N-ion implanted sapphire substrate

Authors

Junggeun Jhin; Jaekyun Kim; Mingu Kang; Dongjin Byun; Park Young Ju; Eui Kwan Koh

Citation

The 11th Seoul International Symposium on the Physics of Semiconductors and Applications-2002, pp.282

URI

https://pubs.kist.re.kr/handle/201004/106701

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KIST Conference Paper > Others

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