H₂/N₂ mixing plasma pretreatment of sapphire for GaN deposition

Authors
J.K.KimPark, Young JuD.ByunE.K.Koh
Citation
The 11th Seoul International Symposium on the Physics of Semiconductors and Applications-2002, pp.62
URI
https://pubs.kist.re.kr/handle/201004/106726
Appears in Collections:
KIST Conference Paper > Others
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE