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Characteristics of pulse plasma enhanced atomic layer deposition of tungsten nitride diffusion barrier for copper interconnect.

Other Titles

구리배선을 위한 펄스플라즈마 원자층박막증착방법에 의한 텅스텐질화 확산방지막의 특성

Authors

Kim Yong Tae; 심현상

Citation

2002 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2, pp.115 - 118

Keywords

구리배선; 펄스플라즈마; 원자층 증착; 텅스텐질화막; 초고집적소자; W-N; 확산방지막

URI

https://pubs.kist.re.kr/handle/201004/106802

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KIST Conference Paper > Others

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