Temperature dependence of photoluminescence peak from carbon-doped GaAs epilayers grown on high miller index GaAs substrates

Title
Temperature dependence of photoluminescence peak from carbon-doped GaAs epilayers grown on high miller index GaAs substrates
Authors
조신호손창식이달진김성일김용김은규민석기
Keywords
temperature dependence; photoluminescence peak; carbon-doped GaAs; MOCVD; high miller index
Issue Date
1997-02
Publisher
Proc. 4th Korean conf. semiconductors.
Citation
, 65-66
URI
http://pubs.kist.re.kr/handle/201004/10691
Appears in Collections:
KIST Publication > Conference Paper
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