DSpace at KIST: Electrical characteristics of Ir/atomic layer deposited ZrO ₂ /Si field effect transistors

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DC Field	Value	Language
dc.contributor.author	심현상	-
dc.contributor.author	심선일	-
dc.contributor.author	Kim Yong Tae	-
dc.date.accessioned	2024-01-13T13:02:44Z	-
dc.date.available	2024-01-13T13:02:44Z	-
dc.date.created	2021-09-29	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/107130	-
dc.language	English	-
dc.title	Electrical characteristics of Ir/atomic layer deposited ZrO ₂ /Si field effect transistors	-
dc.type	Conference	-
dc.description.journalClass	1	-
dc.identifier.bibliographicCitation	2002 Materials Research Society Fall Meeting Abstracts, pp.336	-
dc.citation.title	2002 Materials Research Society Fall Meeting Abstracts	-
dc.citation.startPage	336	-
dc.citation.endPage	336	-
dc.citation.conferencePlace	US	-

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