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A new ferroelectric gate structure for low power operation of non volatile memory devices

Authors

Kim Yong Tae; 심선일; Kim Seong Il; 최훈상; 최인훈; Makoto Ishida

Citation

Proceeding of International conference on Elctrical Engineering, v.3, pp.1816 - 1820

Keywords

ferroelectric gate

URI

https://pubs.kist.re.kr/handle/201004/107523

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KIST Conference Paper > Others

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