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The influence of a buried misfit dislocation network on the pyramid-to-dome transition size in Ge self-assembled quantum dots on Si(001)

Authors

H.J.Kim; Chang Joonyeon; Y.H.Xie

Citation

2001, Electronic Materials Conference in Notre Dame June 27-29

Keywords

quantum dot

URI

https://pubs.kist.re.kr/handle/201004/107540

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KIST Conference Paper > Others

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