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Relationships among coercive voltage, memory window and electric distribution in ferroelectric gate structure

Authors

Sung-Kyun Lee; Kim Yong Tae; Kim Seong Il; 이철의

Citation

Ferroelectric Materials Application, pp.209 - 210

Keywords

ferroelectric gate

URI

https://pubs.kist.re.kr/handle/201004/107547

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KIST Conference Paper > Others

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