Characterization of η -channel Ge MOSFETs with gate insulators formed by high pressure thermal oxidation.

Title
Characterization of η -channel Ge MOSFETs with gate insulators formed by high pressure thermal oxidation.
Authors
이정일E. E. CrismanP. J. StilesO. J. Gregory
Keywords
MOSFET; Ge; thermal oxide
Issue Date
1987-01
Publisher
Electronics letters
Citation
v. 23, no. 1, 8-?
URI
http://pubs.kist.re.kr/handle/201004/10756
Appears in Collections:
KIST Publication > Article
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