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Effects of voltage distribution in Pt/SrBi2Ta2O9/Ta2O5/Si structure on memory window of ferroelectric gate

Authors

Kim, Yong Tae; 최훈상; 박건상; 최인훈

Citation

12th IEEE International Symposium on Applications of Ferroelectrics

Keywords

SrBi2Ta2O9

URI

https://pubs.kist.re.kr/handle/201004/108303

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KIST Conference Paper > Others

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