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Achievment of high memory window of YMnO3/Si gate by thermal treatment in nitrogen ambient

Authors

김익수; 최재형; Kim, Yong Tae; 최인훈

Citation

12th IEEE International Symposium on Applications of Ferroelectrics, pp.47

Keywords

YMnO3; ferroelectric gate; memory window

URI

https://pubs.kist.re.kr/handle/201004/108317

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KIST Conference Paper > Others

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