In/Ga alloy source 를 이용하여 VPE 법으로 성장한 In// χ Ga//1//-// χ As( χ <a03)/GaAs 의 InAs 조성에 따른 밴드갭 및 전위밀도변화 .

Title
In/Ga alloy source 를 이용하여 VPE 법으로 성장한 In// χ Ga//1//-// χ As( χ <a03)/GaAs 의 InAs 조성에 따른 밴드갭 및 전위밀도변화 .
Authors
김용한철원김현수민석기
Keywords
VPE; In/Ga alloy source; band gap; dislocation
Issue Date
1988-08
Publisher
새물리
Citation
v. 28, 444-?
URI
http://pubs.kist.re.kr/handle/201004/10847
Appears in Collections:
KIST Publication > Article
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