Creation of deep levels in horizontal bridgman grown GaAs by hydrogenation.

Title
Creation of deep levels in horizontal bridgman grown GaAs by hydrogenation.
Authors
김은규조훈형민석기김재봉장진
Keywords
deep level; hydrogenation; GaAs
Issue Date
1988-09
Publisher
Applied physics letters
Citation
v. 53, no. 10, 856-858
URI
http://pubs.kist.re.kr/handle/201004/10848
Appears in Collections:
KIST Publication > Article
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