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Dependence of the intermixing of InGaAs/InGaAsP quantum well in impurity free vacancy disordering on the NH₃ flow rate for the growth of SiNx capping layer

Authors

Choi Won Jun; 이희택; Woo Deok Ha; Lee Seok; Kim Sun Ho; CHOI SANG SAM

Citation

2000 March Meeting Bulletin of the a Merican Physical Society, v.45, no.1, pp.807

Keywords

quantum well intermixing

URI

https://pubs.kist.re.kr/handle/201004/108610

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KIST Conference Paper > Others

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