Fabrication and characterization of delta-doped In0.2Ga0.8As/GaAs quantum wire structures grown by MOCVD using selective area epitaxy

Title
Fabrication and characterization of delta-doped In0.2Ga0.8As/GaAs quantum wire structures grown by MOCVD using selective area epitaxy
Authors
김성일H.H. TanC. JagadishL.V. DaoM. Gal
Keywords
delta-doped; quantum wire; MOCVD
Issue Date
1998-12
Publisher
Conference on Optoelectronic and Microelectronic Materials And Devices (COMMAD'98)
Citation
, 145-146
URI
http://pubs.kist.re.kr/handle/201004/10879
Appears in Collections:
KIST Publication > Conference Paper
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