DSpace at KIST: A study of GaN characteristics affected by stress existing in N+-implanted Si(111) substrate

Full metadata record

DC Field	Value	Language
dc.contributor.author	고의관	-
dc.contributor.author	Park Young Ju	-
dc.contributor.author	KIM EUN KYU	-
dc.contributor.author	PARK CHAN-SOO	-
dc.contributor.author	이석현	-
dc.contributor.author	이정희	-
dc.contributor.author	조성호	-
dc.date.accessioned	2024-01-13T16:31:25Z	-
dc.date.available	2024-01-13T16:31:25Z	-
dc.date.created	2021-09-29	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/108912	-
dc.language	English	-
dc.subject	GaN	-
dc.title	A study of GaN characteristics affected by stress existing in N+-implanted Si(111) substrate	-
dc.type	Conference	-
dc.description.journalClass	2	-
dc.identifier.bibliographicCitation	Proc. 7th Korean Conf. on Semiconductors = 제 7 회 한국반도체 학술대회, pp.507 - 508	-
dc.citation.title	Proc. 7th Korean Conf. on Semiconductors = 제 7 회 한국반도체 학술대회	-
dc.citation.startPage	507	-
dc.citation.endPage	508	-
dc.citation.conferencePlace	KO	-

Show Simple Item Record

KIST Library Institutional Repository