Simple extraction method for mobility parameters in Si-MOSFETs at 77K.

Title
Simple extraction method for mobility parameters in Si-MOSFETs at 77K.
Authors
강광남이정일이명복K. O. Park
Keywords
MOSFET
Issue Date
1990-01
Publisher
Electronics letters
Citation
v. 26, no. 13, 852-?
URI
http://pubs.kist.re.kr/handle/201004/10916
Appears in Collections:
KIST Publication > Article
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