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Lateral transport through self-assembled In(Ga)As quantum dots located in the narrow gap (~ 30 nm) between e-beam patterned electrodes

Authors

정석구; MIN BYUNG DON; KIM YOUN; KIM EUN KYU; 현찬경; 황성우; PARK JEONG HO

Citation

Abstracts of MRS 1999 Spring Meeting, pp.362

Keywords

self-assembled QDs

URI

https://pubs.kist.re.kr/handle/201004/109324

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KIST Conference Paper > Others

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