Deep traps in GaAs layers grown on (100)Si substrates by Mo(VI).

Title
Deep traps in GaAs layers grown on (100)Si substrates by Mo(VI).
Authors
김용조훈영김은규윤주훈조성호김무성김현수민석기
Keywords
deep levels; GaAs-on-Si; MOCVD
Issue Date
1990-03
Publisher
Journal of applied physics
Citation
v. 67, 2454-?
URI
http://pubs.kist.re.kr/handle/201004/10953
Appears in Collections:
KIST Publication > Article
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