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dc.contributor.author김용-
dc.contributor.author조훈영-
dc.contributor.author김은규-
dc.contributor.author윤주훈-
dc.contributor.author조성호-
dc.contributor.author김무성-
dc.contributor.author김현수-
dc.contributor.author민석기-
dc.date.accessioned2015-12-02T04:56:48Z-
dc.date.available2015-12-02T04:56:48Z-
dc.date.issued199003-
dc.identifier.citationv. 67, 2454-?-
dc.identifier.other1854-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/10953-
dc.publisherJournal of applied physics-
dc.subjectdeep levels-
dc.subjectGaAs-on-Si-
dc.subjectMOCVD-
dc.titleDeep traps in GaAs layers grown on (100)Si substrates by Mo(VI).-
dc.typeArticle-
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