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Absorption properties of the epitaxial Alx-Ga1-xN grown by plasma induced molecular beam epitaxy

Authors

Jewon Kim; SON CHANG-SIK; 심선일; 최인훈; PARK YOUNG KYUN; Kim Yong Tae; O. Ambacher; M. Stutzmann

Citation

한국물리학회 회보 = Bulletin of the Korean Physical Society, v.16, no.2, pp.471

Keywords

Absorption Properties; AlGaN; Gallium Nitride; molecular beam epitaxy

URI

https://pubs.kist.re.kr/handle/201004/110444

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KIST Conference Paper > Others

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