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Reduced Al-Ga interdiffusion in GaAs/AlGaAs multiple quantum well structure by introducing low hydrogen content SiN//x capping layer for dielectric cap quantum well disordering

Authors

Choi Won Jun; 한상민; S.I. Shah; CHOI SUKGEUN; Woo Deok Ha; Lee Seok; KIM HWE JONG; Han Il Ki; Lee Jung Il; KANG KWANG NHAM; 조재원

Citation

Materials Research Society Symposium, v.484, pp.419 - 424

Keywords

Quantum well disordering; Hydogen content in capping layer; Photonic Interated circuit

URI

https://pubs.kist.re.kr/handle/201004/110528

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KIST Conference Paper > Others

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