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dc.contributor.authorHo Nyung Lee-
dc.contributor.authorKim Yong Tae-
dc.contributor.author이창우-
dc.contributor.author신동석-
dc.contributor.author조성호-
dc.date.accessioned2024-01-13T20:03:05Z-
dc.date.available2024-01-13T20:03:05Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/110876-
dc.languageEnglish-
dc.subjectC-V characteristics-
dc.titleCharacteristics of SrBi//2Ta//2O//9/CeO//2/Pt/Si structure for non-volatile memory device-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitation제 73 회 한국물리학회, v.15, no.1, pp.181-
dc.citation.title제 73 회 한국물리학회-
dc.citation.volume15-
dc.citation.number1-
dc.citation.startPage181-
dc.citation.endPage181-
dc.citation.conferencePlaceKO-
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