Schottky barrier enhancement of InGaAs with SiNx grown by PECVD.

Title
Schottky barrier enhancement of InGaAs with SiNx grown by PECVD.
Authors
강광남이정일김충환박홍이한일기
Keywords
PECVD
Issue Date
1992-01
Publisher
한국 물리학회 학술발표회 , 서울대
Citation
, ?-?
URI
http://pubs.kist.re.kr/handle/201004/11091
Appears in Collections:
KIST Publication > Conference Paper
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